| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride compound semiconductor light-emitting device having superior emission characteristics with superior productivity, to provide the group III nitride compound semiconductor light-emitting device and a lamp. <P>SOLUTION: In this method, an intermediate layer 12 comprising at least a group III nitride compound is arranged on a substrate 11, and then an n-type semiconductor layer 14 having a foundation layer 14a, a light-emitting layer 15, and a p-type semiconductor layer 16 are arranged sequentially on the intermediate layer 12. This method includes a pretreatment step of plasma-processing the substrate 11 and a sputtering step, following the pretreatment step for forming the intermediate layer 12 on the substrate 11 by a sputtering method. <P>COPYRIGHT: (C)2008,JPO&INPIT |
