发明名称 METHOD FOR FABRICATING NONLINEAR ELEMENT, NONLINEAR ELEMENT, AND ELECTRO-OPTIC DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for fabricating a nonlinear element in which nitrogen can be distributed suitably over the entire thickness direction of a tantalum oxide film when a tantalum oxide film containing hydrogen and nitrogen is employed as an insulating layer, to provide a nonlinear element, and to provide an electro-optic device. <P>SOLUTION: When a nonlinear element 10x is fabricated, a tantalum oxide film 13 containing nitrogen and an aluminum film 17 containing nitrogen are formed and a lower electrode 13x is patterned. Anodic oxidation is then performed using the lower electrode 13x as anode to transform an aluminum film 17x containing nitrogen into an aluminum oxide film 18x and to form tantalum oxide films 14y and 14z containing nitrogen, as an insulating layer 14x, at the upper surface portion and the side face portion of the lower electrode 13x. Subsequently, the aluminum oxide film 18x containing nitrogen is removed by etching and hydrogen is introduced to the insulating layer 14x. Finally, an upper electrode 15x is formed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008108934(A) 申请公布日期 2008.05.08
申请号 JP20060290802 申请日期 2006.10.26
申请人 EPSON IMAGING DEVICES CORP 发明人 NAGANO DAISUKE
分类号 H01L49/02;G02F1/1365 主分类号 H01L49/02
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