发明名称 SEMICONDUCTOR DEVICE FABRICATING METHOD
摘要 A semiconductor device fabricating method capable of managing a process having a step of forming a hole in a semiconductor wafer, more strictly and conveniently than the prior art while employing a non-destructive inspection. The semiconductor device fabricating method performs the process management of the semiconductor device, by specifying one of a plurality of holes formed in the semiconductor wafer, as an object hole, and by non-destructively measuring the shape or diameter of the hole top of the object hole, the shape or diameter of the hole bottom of the object hole, and the state or residue of the bottom of the object hole. The process of the semiconductor device is managed on the basis of the shape or diameter of the hole top, the shape or diameter of the hole bottom, and the state or residue of the bottom.
申请公布号 KR20080040623(A) 申请公布日期 2008.05.08
申请号 KR20077026467 申请日期 2007.11.14
申请人 KABUSHIKI KAISHA TOPCON 发明人 YAMADA KEIZO
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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