| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonlinear element wherein nitrogen can be entirely distributed in the direction of thickness of a tantalum oxide film when the tantalum oxide film containing hydrogen and nitrogen is used as an insulation film, and to provide a method of manufacturing an electro-optic device. <P>SOLUTION: When a nonlinear element 10x is manufactured, a tantalum film containing tungsten and nitrogen is used to form a lower electrode 13x, and the surface of the lower electrode 13x is oxidized to form an insulation film 14x formed of a tantalum oxide film. Next, hydrogen is introduced into the insulation layer 14x, and an upper electrode 15x is formed. When forming the insulation layer 14x, vapor phase oxidation is conducted to form a tantalum oxide film with a film thickness necessary for forming the insulation layer 14x, and then anodic oxidation is conducted. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
