| 摘要 |
PROBLEM TO BE SOLVED: To improve performance in CMOS equipment through stress utilization and simplify its process. SOLUTION: The semiconductor device includes a first MOS transistor having a gate electrode structure formed on a first conductive type active region, a second conductive type source/drain region formed on the active region on both sides of the gate electrode structure, a recessed portion dug from the surface of the source/drain region, and a second conductive type semiconductor buried region grown in an embedded state in the recessed portion and used for applying stress to a channel under the gate electrode; and a second MOS transistor having a gate electrode structure formed on the second conductive type active region, a first conductive type source/drain region formed on the active region on both sides of the gate electrode structure, and a first conductive type epitaxial layer formed on the source/drain region without using the recessed portion and capable of applying stress to the channel preferably. COPYRIGHT: (C)2008,JPO&INPIT |
