发明名称 CMP of copper/ruthenium/tantalum substrates
摘要 The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic surfactant, calcium ion or magnesium ion, a corrosion inhibitor for copper, and water, wherein the pH of the polishing composition is about 6 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
申请公布号 US2008105652(A1) 申请公布日期 2008.05.08
申请号 US20060591730 申请日期 2006.11.02
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 BRUSIC VLASTA;ZHOU RENJIE;THOMPSON CHRISTOPHER C.;FEENEY PAUL M.
分类号 C09K13/00;B44C1/00 主分类号 C09K13/00
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