| 摘要 |
Ultra low K nanoporous dielectric films may be formed by chemical vapor deposition of silicon-containing components and large non-silicon containing porogens having labile groups. In accordance with one embodiment of the present invention, a low K nanoporous film may be formed by the oxidative reaction between trimethylsilane (the silicon-containing component) and alpha-terpinene (the non-silicon containing component). In accordance with certain embodiments of the present invention, the oxidant can comprise other than molecular oxygen, for example water vapor introduced in-situ or remotely, and then exposed to RF energy to generate reactive ionic species.
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