| 摘要 |
The present invention provides a method for evaluating dopant contamination of a semiconductor wafer, wherein a resistivity of a bulk portion of the semiconductor wafer is measured by an eddy current method, a resistivity in a surface layer of the semiconductor wafer is measured by a surface photovoltage method, and an amount of dopant contamination of the semiconductor wafer is calculated from a difference between a value of the resistivity of the bulk portion measured by the eddy current method and a value of the resistivity in the surface layer measured by the surface photovoltage method. As a result of this, it is possible to provide the method for evaluating dopant contamination of a semiconductor wafer, which can measure the amount of dopant contamination of a whole surface layer of the semiconductor wafer without contact, nondestructively, and accurately.
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