发明名称 THIN-FILM TRANSISTOR
摘要 Fabrication of thin-film transistor devices on polymer substrate films that is low-temperature and fully compatible with polymer substrate materials. The process produces micron-sized gate length struc¬ tures that can be fabricated using inkjet and other standard printing techniques. The process is based on microcrack technology developed for surface conduction emitter configurations for field emission devices.
申请公布号 WO2008007226(A3) 申请公布日期 2008.05.08
申请号 WO2007IB03071 申请日期 2007.07.09
申请人 NANO-PROPRIETARY, INC.;FINK, RICHARD, LEE;YANIV, ZVI 发明人 FINK, RICHARD, LEE;YANIV, ZVI
分类号 H01L51/10;H01L51/40 主分类号 H01L51/10
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