| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can take out light with high polarization ratio while increasing the quantity of light to be taken out in the light take-out direction. <P>SOLUTION: The semiconductor light emitting element 1 comprises a substrate 2, a nitride semiconductor laminate structure 3 on the substrate 2, an anode 4, and a cathode 6. Major surface of the substrate 2 and the nitride semiconductor laminate structure 3 consists of a nonpolar m-surface. The nitride semiconductor laminate structure 3 consists of an n-type contact layer 11, a reflective layer 12, an active layer 13, a final barrier layer 14, a p-type electron block layer 15, and a p-type contact layer 16 formed sequentially from the substrate 2 side. The reflective layer 12 for reflecting the light traveling reversely to the light take-out direction A to the light take-out direction A is formed continuously on the surface of the active layer 13 opposite to the light take-out direction A. The reflective layer 12 is a super lattice layer where ten pairs of Al<SB>0.2</SB>Ga<SB>0.8</SB>N layer and GaN layer are laminated periodically. <P>COPYRIGHT: (C)2008,JPO&INPIT |
