| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical light-emitting diode element that can alleviate contact resistance of n-type electrode and n-type GaN layer, and can improve thermal stability, and the manufacturing method thereof. <P>SOLUTION: TThe vertical light-emitting diode element of this invention comprises an n-type electrode 160, an n-type GaN layer 110 formed on the bottom surface of the n-type electrode 160 that has a Ga<SP>+</SP>N layer 110c containing more Ga element than N element on the surface touching the n-type electrode 160, an active layer 120 formed on the bottom surface of the n-type GaN layer 110, a p-type GaN layer 130 formed on the bottom surface of the active layer 120, a p-type electrode 140 formed on the bottom surface of the p-type GaN layer 130, and a structure support layer 150 formed on the bottom surface of the p-type electrode 140. <P>COPYRIGHT: (C)2008,JPO&INPIT |
