发明名称 TIN OXIDE-BASED SPUTTERING TARGET, LOW RESISTIVITY, TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SUCH FILM AND COMPOSITION FOR USE THEREIN
摘要 The present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole% of SnO<SUB>2</SUB>, and b) from about 1 to about 40 mole% of one or more materials selected from the group consisting of i) Nb<SUB>2</SUB>O<SUB>5</SUB>, ii) NbO, iii) NbO<SUB>2,</SUB> iv) WO<SUB>2</SUB>, v) a material selected consisting of a) a mixture of MoO<SUB>2</SUB> and Mo and b) Mo, vi) W, vii) Ta<SUB>2</SUB>O<SUB>5</SUB>, and viii) mixtures thereof, wherein the mole %s are based on the totai product and wherein the sum of components a) and b) is 100. The invention is aiso directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
申请公布号 WO2008055201(A2) 申请公布日期 2008.05.08
申请号 WO2007US83160 申请日期 2007.10.31
申请人 H. C. STARCK INC.;KUMAR, PRABHAT;WU, RONG-CHEIN, RICHARD;SUN, SHUWEI 发明人 KUMAR, PRABHAT;WU, RONG-CHEIN, RICHARD;SUN, SHUWEI
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