METHOD OF MANUFACTURING A STACK TYPE SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a stack type semiconductor device is provided to improve a surface flatness by forming a passivation layer pattern on an edge region of a second substrate. A surface layer(106) is formed on a first substrate. An insulation layer(206) is formed on a second substrate(200). The first and second substrates are attached to each other, such that the surface layer is attached on the insulation layer. A portion of the first substrate is separated, such that the surface layer remains only on a center portion of the second substrate. A passivation layer pattern(404) is formed on an edge region of the second substrate, to which the surface layer is attached. The surface layer, which is attached to the passivation layer pattern, is planarized. A thickness of the passivation layer pattern is equal to or greater than that of the surface layer.