FABRICATING METHOD OF SEMICONDUCTOR MEMORY DEVICE AND MONITORING METHOD OF DIELECTRIC LAYER THICKNESS OF THE SAME

摘要

A method for manufacturing a semiconductor memory device and a method for measuring a thickness of a dielectric layer of the same are provided to measure the thickness of the dielectric layer by forming a capacitor bottom electrode in a capacitor cell region and forming a measuring bottom electrode in a non-cell region. An interlayer dielectric(110) is formed on a semiconductor substrate(100). A storage node contact(120) is connected through the interlayer dielectric to the semiconductor substrate. A capacitor mold oxide layer(140) is formed on the interlayer dielectric. A capacitor opening for exposing the storage node contact is formed by patterning the capacitor mold oxide layer. A conductive layer for lower electrode is formed on the entire surface of the semiconductor substrate. A capacitor bottom electrode(152) and a measuring bottom electrode(154) are formed at the capacitor opening and the capacitor mold oxide layer by patterning the conductive layer for lower electrode. A dielectric layer(170) is formed on the resultant.