| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin film transistor which has a sufficient transistor characteristic and has less dispersion between transistor elements. SOLUTION: The organic thin film transistor has a gate electrode, a gate insulating film, a source electrode and a drain electrode on a substrate and has an organic semiconductor layer between the source electrode and the drain electrode. The source electrode or the drain electrode has a structure with three or more radial branches from a point near a center of the organic semiconductor layer. The other source electrode or the drain electrode surrounds the electrode having the radial branching structure across a constant distance. COPYRIGHT: (C)2008,JPO&INPIT
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