| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of cleaning a semiconductor device by which pollutant metal containing at least one of 3 group element (La, Ce, Pr, Nd, Th), 3A group element (Sc, Y), 4A group element (Zr, Hf), and 5A group element (Ta) can be removed at high speed and in high efficiency. SOLUTION: The method of cleaning a semiconductor device is used to remove pollutant metal 11 that exists on a semiconductor substrate 10 and contains at least one selected from a group comprised of 3 group element (La, Ce, Pr, Nd, Th), 3A group element (Sc, Y), 4A group element (Zr, Hf), and 5A group element (Ta). It includes a step to oxidize the semiconductor substrate 10 by vapor phase so as to form a silicon oxide film 12 under the pollutant metal 11 and a step to remove the pollutant metal 11 together with the silicon oxide film 12 by chemical containing hydrofluoric acid or its salt. COPYRIGHT: (C)2008,JPO&INPIT
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