METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF

摘要

A method for forming a semiconductor device (10) includes providing a semiconductor substrate (12) comprising silicon, forming a layer of dielectric (14) on the surface of the semiconductor substrate, forming a gate electrode (16) comprising silicon over the layer of dielectric, recessing the layer of dielectric under the gate electrode, filling the recess (19) with a discrete charge storage material (24 or 54), oxidizing a portion (30) of the gate electrode, and oxidizing (21) a portion of the semiconductor substrate.