发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To form a thin-film resistor on an upper face of an insulating film on a silicon substrate in a semiconductor device called CSP even if there is an integrated circuit on the upper face of the silicon substrate. <P>SOLUTION: On the upper face of a protective film 5 formed on a silicon board 1, a thin-film resistor 9 is formed between two wirings 8b(base metal layer 7b is included). When the thin-film resistor 9 is formed on the upper face of the protective film on the silicon substrate 1, metal nanotechnology ink 24 is applied by an ink-jet method using an ink jet head 23, and then baking is carried out, so that thin-film resistor formation can be realized even if there is an integrated circuit on the upper face of the silicon substrate 1. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008108935(A) 申请公布日期 2008.05.08
申请号 JP20060290824 申请日期 2006.10.26
申请人 CASIO COMPUT CO LTD 发明人 KONO ICHIRO
分类号 H01L21/822;H01L21/3205;H01L23/12;H01L23/52;H01L27/04 主分类号 H01L21/822
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