| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of inhibiting the generation of a dishing by a CMP while suppressing the lowering of an isolation capacity, the increase of a floating capacity or the like. SOLUTION: An STI element isolation having a broad opening width is composed by an isolation insulating layer 7 filled to a trench 5a and an insulating layer 13 formed on the bottom of the trench 5a. The insulating layer 13 is formed by implanting oxygen ions to a silicon board 10. According to this configuration, since the trench 5a can be formed shallowly, the generation of the dishing in the surface of the isolation insulating film 7 filled to the trench 5a during a CMP can be inhibited. Since the insulating layer 13 is formed on the bottom of the trench 5a, the lowering of the element isolation capacity and the increase of the floating capacity are suppressed. COPYRIGHT: (C)2008,JPO&INPIT
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