Silylphenylene Polymer Composition For The Formation Of Interlayers And Process For The Formation Of Patterns By Using The Same

摘要

A composition for forming an intermediate layer is provided, having improved etching resistance and prevention of reflection of short-wavelength light (ability to absorb short-wavelength light). The composition for forming an intermediate layer (hard mask) is constituted to include at least (A) a silylphenylene-based polymer having a repeating unit represented by the following general formula (1), and (B) a solvent. In the formula, R₁ and R₂ are each independently hydrogen or an alkyl group having 1 to 20 carbon atoms; and m and n are integers representing the number of repeating units.