A ferroelectric capacitor stack is formed over a metal-dielectric interconnect layer. After forming the interconnect layer, the surface of the interconnect layer is treated with gas cluster ion beam (GCIB) processing. Prior to this processing, the surface typically includes metal recesses (402). The GCIB processing smoothes these recesses and provides a more level surface on which to form the ferroelectric capacitor stack. When the ferroelectric capacitor stack is formed on this leveled surface, leakage is reduced and yields increased as compared to the case where GCIB processing is not used.
申请公布号
WO2008036963(A3)
申请公布日期
2008.05.08
申请号
WO2007US79263
申请日期
2007.09.24
申请人
TEXAS INSTRUMENTS INCORPORATED;HALL, LINDSEY;AGGARWAL, SANJEEV;RAO, SATYAVOLU SRINIVAS, PAPA
发明人
HALL, LINDSEY;AGGARWAL, SANJEEV;RAO, SATYAVOLU SRINIVAS, PAPA