| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, of which aggregation of a silicide layer is suppressed, the resistance of a contact resistor is lowered, and occurrence of disconnection is suppressed. <P>SOLUTION: The semiconductor device comprises an impurity diffusion region 105 and a gate electrode 104 formed on a semiconductor substrate 101, a silicide layer 106 formed on the impurity diffusion region 105 and the gate electrode 104, and a first etching stop film 110 formed on the silicide layer 106. The first etching stop film 110 is so formed as to enclose the side surface of a lower layer contact plug 109 provided on the silicide layer 106. <P>COPYRIGHT: (C)2008,JPO&INPIT |
