发明名称 NITRIDE-CONTAINING TARGET MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a target material used in an AIP (arc ion plating) process and an MS (magnetron sputtering) process, in which mechanical strength is improved, and further, the formation of droplets is suppressed, and which is suitable for forming a film having high quality. SOLUTION: In a target material comprising Al and an M component(s); wherein, the M component(s) is one or more kinds of elements selected from the group 4a, 5a and 6a metals, Si, B and S, the target material in this invention is a nitride-containing target material comprising Al and the M component(s) and the nitride of Al. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008106287(A) 申请公布日期 2008.05.08
申请号 JP20060287241 申请日期 2006.10.23
申请人 HITACHI TOOL ENGINEERING LTD 发明人 ONUMA HITOSHI;KUBOTA KAZUYUKI;ISAKA MASAKAZU
分类号 C23C14/34;B22F3/14;B23B27/14;C22C14/00;C22C21/00;C22C27/06 主分类号 C23C14/34
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