| 摘要 |
PROBLEM TO BE SOLVED: To provide a two-fluid nozzle capable of executing processing corresponding to a processing target by changing a delivering flow rate of a gas, and a substrate processing apparatus equipped with the same. SOLUTION: The two-fluid nozzle 3 for supplying droplets of DIW to a wafer W has a circular processing liquid delivery port 28 for discharging the DIW, a first gas discharge port 29 surrounding the processing liquid discharge port 28, and a second gas delivery port 31 surrounding the first gas delivery port 29. The first gas delivery port 29 delivers a nitrogen gas at a small flow rate, and the second gas delivery port 31 delivers a nitrogen gas at a large flow rate. A controller controls the supply of the nitrogen gas to the first and second gas delivers ports 29, 31, so that the two-fluid nozzle 3 can soley execute the delivering of the nitrogen gas at both the large and small flow rates. Thus, processing according to the surface status can be applied to the wafer W. COPYRIGHT: (C)2008,JPO&INPIT
|
