SILICON-CARBIDE SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a facet face consisting of a single crystal face to the face of a silicon carbide layer, and to improve the element characteristics of a silicon-carbide semiconductor element. SOLUTION: The silicon-carbide semiconductor element has a silicon-carbide substrate 1 having an off angle and a silicon carbide layer 10 formed on the silicon-carbide substrate 1. The face of the silicon carbide layer 10 has the facet faces 9 composed of the monocrystal face, and the facet faces 9 are inclined to an envelope on the face of the silicon-carbide substrate 1. The silicon carbide layer 10 contains a first region 10a forming the facet faces 9 and a second region 10b adjacent to lowest sections 9Lon the facet faces 9. Highest sections 9Hin the first region 10a are higher than the face of the second region 10b, and a stepped section with a bottom section more recessed than the lowest sections 9Lin the facet faces 9 is not formed along at least parts of the end sections of the facet faces 9 on the face of the silicon carbide layer 10. COPYRIGHT: (C)2008,JPO&INPIT