| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for mask vapor deposition and a mask vapor deposition apparatus capable of improving the close contact of chips and a substrate to be treated even in the case of using a mask with a plurality of the chips fixed on a support substrate. SOLUTION: In the method for mask vapor deposition and the mask vapor deposition apparatus, vapor deposition is carried out by arranging a mask 10 which is formed by bonding a plurality of chips having apertures 22 to a support substrate 30 at the lower surface side of a substrate 200 to be treated. At this time, weights 18 are arranged in regions 221 overlapped with the chips 20 on the back surface 220 of the substrate 200. Then, even if the center of the mask 10 is bent downward in a recessed state by its weight and bending or inclination occurs in the chips 20, at least the region of the substrate 200 overlapped with the chips 20 is changed in shape by imitating correctly the bending or inclination of the chips 20 since the weights 18 press the regions 221 overlapped with the chips 20 on the back surface 220 of the substrate 200. COPYRIGHT: (C)2008,JPO&INPIT
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