MANUFACTURING METHOD FOR THIN FILM TRANSISTOR, ELECTRO-OPTIC DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor by which interface level density between a silicon layer and a gate insulating film can be lowered. SOLUTION: This method for manufacturing the thin film transistor includes the steps of: forming the silicon layer 4 on a substrate 2; forming a silicon oxide film 5a on the silicon layer 4 by a chemical vapor deposition method using a tetraethoxysilane as a raw material gas; forming a silicon nitride film 5b at an upper layer of the silicon oxide film 5a; and executing an annealing treatment. COPYRIGHT: (C)2008,JPO&INPIT