NONVOLATILE SEMICONDUCTOR MEMORY, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory wherein the short circuit between a selection transistor and a memory transistor can be prevented, and to provide a manufacturing method thereof. SOLUTION: This nonvolatile semiconductor memory comprises a memory cell including the memory transistor MT and the selection transistor ST. The memory transistor MT has a floating gate FG and a control gate CG formed by laminating them together. The selection transistor ST has a lower gate layer G2 and an upper gate layer G1 formed by laminating them together. The lower gate layer G2 is separated for each selection transistor ST. The upper gate layer G1 is shared by a plurality of selection transistors ST and is electrically connected to the lower gate layer G2 of each of the plurality of selection transistors ST. COPYRIGHT: (C)2008,JPO&INPIT