发明名称 Process for self-aligned manufacture of integrated electronic devices
摘要 A process for self-aligned manufacturing of integrated electronic devices includes: forming, in a semiconductor wafer having a substrate, insulation structures that delimit active areas and project from the substrate; forming a first conductive layer, which coats the insulation structures and the active areas; and partially removing the first conductive layer. In addition, recesses are formed in the insulation structures before forming said first conductive layer.
申请公布号 US2008108200(A1) 申请公布日期 2008.05.08
申请号 US20080006706 申请日期 2008.01.04
申请人 STMICROELECTRONICS S.R.L. 发明人 BEZ ROBERTO;GROSSI ALESSANDRO
分类号 H01L21/20;H01L21/762;H01L21/8234;H01L21/8247;H01L27/06 主分类号 H01L21/20
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