发明名称 |
Process for self-aligned manufacture of integrated electronic devices |
摘要 |
A process for self-aligned manufacturing of integrated electronic devices includes: forming, in a semiconductor wafer having a substrate, insulation structures that delimit active areas and project from the substrate; forming a first conductive layer, which coats the insulation structures and the active areas; and partially removing the first conductive layer. In addition, recesses are formed in the insulation structures before forming said first conductive layer.
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申请公布号 |
US2008108200(A1) |
申请公布日期 |
2008.05.08 |
申请号 |
US20080006706 |
申请日期 |
2008.01.04 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
BEZ ROBERTO;GROSSI ALESSANDRO |
分类号 |
H01L21/20;H01L21/762;H01L21/8234;H01L21/8247;H01L27/06 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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