| 摘要 |
PROBLEM TO BE SOLVED: To provide a rectifier having a hetero junction part comprising III-V group compound semiconductor of GaN and the like and has low rise voltage, for example. SOLUTION: In the rectifier, a barrier layer 105 and a channel layer 103 constitute the hetero junction part. A two-dimensional electron gas channel 104 is formed near a boundary of the channel layer 103 and the barrier layer 105. A Schottky gate electrode 109 is connected to an anode ohmic electrode 107 and it covers a whole recess 108 which extends from above the anode ohmic electrode 107 to the barrier layer 105 and is formed in the barrier layer 105. The two-dimensional electron gas channel 104 just below the recess 108 is depleted by influence of the Schottky gate electrode 109 in a state where applied voltage does not exist. Since the recess 108 is formed in the barrier layer 105, threshold voltage at which electrons occur in the two-dimensional electron gas channel 104 just below the gate electrode 109 lowers, so that rise voltage can be lowered compared to a conventional Schottky diode. COPYRIGHT: (C)2008,JPO&INPIT |
