| 摘要 |
PROBLEM TO BE SOLVED: To reduce a minute leakage caused by a failure generated by a stress that occurs when a silicide is formed. SOLUTION: A gate electrode 103 is provided on a monocrystal Si substrate 101 through the intermediary of a gate oxide film 102, a side wall insulating film 105 is provided on each side of the gate electrode 103, and a LOCOS oxide film 104 is provided as an element isolating region. Source-drain regions 108 are each formed in a region located between the side wall insulating film 105 and LOCOS oxide film 104. Furthermore, an eaves-shaped fanlike insulating film 106 is formed on each of the sloping curved surfaces of the side wall insulating film 105 so as not to come into contact with the Si substrate 101, and a fanlike insulating film 107 is formed on the sloping curved surface of the LOCOS oxide film 104 so as not to come into contact with the Si substrate 101. A silicide layer 109 is formed on the source-drain regions 108 excluding regions located below the fanlike insulating films 106 and 107. That is, the silicide layer 109 is formed in a range narrower than the source-drain regions 108. COPYRIGHT: (C)2008,JPO&INPIT
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