发明名称 |
MEMORY DEVICE EMPLOYING THREE-LEVEL CELLS AND RELATED METHODS OF MANAGING |
摘要 |
A memory device may include an array of addressable three-level cells, a coding circuit being input with three-bit strings and generating corresponding ternary strings based upon a code, and a program circuit being input with the ternary strings and storing them in respective pairs of three-level cells. The memory device also may include a read circuit reading stored ternary strings in the respective pairs of three-level cells, and a decoding circuit being input with the stored ternary strings and generating corresponding strings of three bits based upon the code.
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申请公布号 |
US2008106937(A1) |
申请公布日期 |
2008.05.08 |
申请号 |
US20070934144 |
申请日期 |
2007.11.02 |
申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
MAGNAVACCA ALESSANDRO;SCOTTI MASSIMILIANO;GATTO NICOLA DEL;NAVA CLAUDIO;FERRARIO MARCO;MOLLICHELLI MASSIMILIANO |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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