发明名称 Method for determining self-heating free I-V characterstics of a transistor
摘要 According to one exemplary embodiment, a method for determining a self-heating free drain current in a transistor corresponding to a channel temperature not affected by a drain DC current includes measuring at least three unique drain currents of a transistor corresponding to at least three unique ambient temperatures. The method further includes determining at least three unique channel temperatures of the transistor corresponding to the at least three unique drain currents, thereby establishing a current-temperature relationship for the transistor. The method further includes determining the self-heating free drain current of the transistor utilizing the current-temperature relationship.
申请公布号 US2008105891(A1) 申请公布日期 2008.05.08
申请号 US20060585006 申请日期 2006.10.23
申请人 ADVANCED MICRO DEVICES, INC. 发明人 CHEN OIANG;WU ZHI-YUAN;SU RICHARD YU-KUWAN
分类号 H01L29/22 主分类号 H01L29/22
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