发明名称 |
METHODS FOR FORMING CO-AXIAL INTERCONNECT LINES IN A CMOS PROCESS |
摘要 |
<p>A method of forming a co-axial interconnect line in a dielectric layer is provided. The method includes defining a trench in the dielectric layer and then forming a shield metallization layer within the trench. After forming the shield metallization layer, a conformal oxide layer is deposited within the shield metallization layer. A center conductor is then formed within the conformal oxide layer. Once the center conductor is formed, a fill oxide layer is deposited over the center conductor. A cap metallization layer is then formed over the fill oxide layer and is in contact with the shield metallization layer.</p> |
申请公布号 |
EP1145312(B1) |
申请公布日期 |
2008.05.07 |
申请号 |
EP20000957505 |
申请日期 |
2000.08.16 |
申请人 |
NXP B.V. |
发明人 |
WELING, MILIND;BOTHRA, SUBHAS;GABRIEL, CALVIN, TODD;MISHELOFF, MICHAEL |
分类号 |
H01L21/3205;H01L23/522;H01L21/768;H01L21/822;H01L21/8238;H01L23/66;H01L27/04;H01L27/092 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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