发明名称 ATOMIC FORCE MICROSCOPE EQUIPMENT AND MEASURING METHOD OF ELECTRICAL CHARACTERIZATION OF THE SAME
摘要 An atomic force microscope apparatus and a method of measuring electrical characteristics using the same are provided to perform a fine machining process using an etching tip having etchant. An atomic force microscope apparatus includes a support part and a storage part. The support part has a multi-layered structure including a first silicon nitride layer(110), a first oxide layer(108), a silicon substrate(100), a second oxide layer(112), and a second silicon layer(114). The storage part has a multi-layered structure including the first oxide layer, the silicon substrate, the second oxide layer, and the second silicon nitride layer. The storage part has a hole-shaped contact part such that the etchant stored in the storage part flows out.
申请公布号 KR20080039139(A) 申请公布日期 2008.05.07
申请号 KR20060106921 申请日期 2006.10.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, DEOK SU
分类号 G01Q60/24;G01Q60/42;G01Q90/00 主分类号 G01Q60/24
代理机构 代理人
主权项
地址