| 摘要 |
A method of manufacturing a semiconductor device is provided to reduce the fraction defective by preventing bit lines from being collapsed, and preventing short phenomenon between adjacent bit lines. An etch stop layer(46) and a first hard mask layer(47) are formed on a semiconductor substrate(41). A groove is formed by etching the first hard mask layer and the etch stop layer. A bit line, which is made of a stacked structure including a barrier layer and a metal layer for lines, is formed within the groove. A second hard mask layer(52) is formed on the first hard mask including the bit line. A bit line spacer surrounding the bit line is formed by etching the first and second hard masks and the etch stop layer.
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