| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to decrease the two dimensional density between capacitors by forming the capacitor applying a trench type capacitor and a stack type capacitor methods simultaneously. A silicon substrate(104) comprises an active region(100) and a device isolation layer(102) defining the active region. Two transistors are formed on the silicon substrate, for sharing the active region. A trench(106) is formed in the silicon substrate. A trench type capacitor(114) which is made of a first lower part electrode(108), a first dielectric layer(110) and a first upper part electrode(112) is formed within the trench. A hole(116) exposing the first upper part electrode is formed at a source region of the silicon substrate, and a first plug(118) is formed within the hole. A plurality of gates(120) are formed on the silicon substrate, a second plug(122) is formed on a source/drain region. A stack type capacitor(130) which is made of a second lower part electrode(124), a second dielectric layer(126) and a second upper part electrode(128) is formed on the second plug of the source region.
|
