METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device is provided to form a semiconductor device of MISFET structure by forming a metal oxide layer on a high voltage region selectively through a photoresist pattern and removing the photoresist pattern, thereby preventing bird's beak generation. A pad oxide layer(21) is formed on a substrate(20). A photoresist pattern(22) is formed on the pad oxide layer. A high voltage insulation layer(23) which is to be buried into a space between the photoresist patterns is deposited. The high voltage gate insulation layer on the photoresist pattern is removed. The photoresist pattern is removed. The pad oxide layer is removed.