| 摘要 |
A polishing pad capable of stably performing, with a high polishing speed, the flattening processing of the materials requiring a high degree of surface flatness such as silicon wafers for semiconductor devices, magnetic disks, and optical lenses, comprising a polishing layer formed of a hardening composition hardened by energy ray and having the irregularities formed by the photolithography method provided on the surface thereof and a polishing layer resin formed of distributed abrasive grains having an ionicity radical of 20 to 1500 eq/ton, whereby the productions such as sheeting and surface finishing of grooves can be performed easily, excellent accuracy of thickness and high and uniform polishing speed can be provided, a variation in quality among individuals can be eliminated, a change of processing pattern can be performed easily, micro processing is allowed, burrs are prevented from occurring in forming the irregularities, slurry-less measure is taken, abrasive grains can be mixed at a high density, and the possibility of occurrence of scratch due to coagulation of abrasive grains can be reduced even if the abrasive grains are distributed. |
