Memory built-in self repair (MBISR) circuits / devices and method for repairing a memory comprising a memory built-in self repair (MBISR) structure,申请号EP20030002698-传众专利搜索

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发明名称	Memory built-in self repair (MBISR) circuits / devices and method for repairing a memory comprising a memory built-in self repair (MBISR) structure
摘要
申请公布号	EP1447813(B1)	申请公布日期	2008.05.07
申请号	EP20030002698	申请日期	2003.02.12
申请人	INFINEON TECHNOLOGIES AG	发明人	DI RONZA, MARIO;MARTELLONI, YANNICK
分类号	G11C29/00;H02H3/05	主分类号	G11C29/00
代理机构		代理人
主权项
地址

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