发明名称 |
FABRICATION METHOD OF SINGLE CRYSTAL SILICON SOLAR BATTERY AND SINGLE CRYSTAL SILICON SOLAR BATTERY |
摘要 |
<p>A method for producing a single crystal silicon solar cell and the single crystal silicon solar cell are provided to enhance light converting efficiency by using a single crystal silicon layer as a light converting layer. An ion implantation layer(14) is formed by implanting hydrogen ions or rare gas ions into a first conductive type single crystal silicon substrate(11). A surface activation process is performed on an ion implanting surface(13) of the single crystal silicon substrate and/or at least on surface of a transparent insulating substrate(12). The ion implanting surface of the single crystal silicon substrate is attached to the transparent insulating substrate. A single crystal silicon layer(17) is formed by separating the single crystal silicon substrate. A plurality of first and second conductive type diffusion regions(21,22) are formed in the separated surface of the single crystal silicon layer. A plurality of pn junctions are formed in at least a surface direction. A plurality of first individual electrodes(23) and a plurality of second individual electrodes(24) are formed in the first conductive regions and the second conductive regions, respectively. A first collector electrode(25) is formed to connect the first individual electrodes to each other. A second collector electrode(26) is formed to connect the second individual electrodes to each other.</p> |
申请公布号 |
KR20080039232(A) |
申请公布日期 |
2008.05.07 |
申请号 |
KR20070103830 |
申请日期 |
2007.10.16 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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