发明名称 |
ZINC OXIDE SEMICONDUCTOR MATERIAL |
摘要 |
A zinc oxide semiconductor material comprising at least zinc and oxygen as constituent elements, which can be deterred with respect to the deterioration of doping characteristic, luminous characteristic and the like, compared with a conventional c-axial oriented one by orienting the crystal orientation plane to a-axis of the wurtzite structure. <IMAGE> |
申请公布号 |
EP1335044(B1) |
申请公布日期 |
2008.05.07 |
申请号 |
EP20000911393 |
申请日期 |
2000.03.27 |
申请人 |
TOHOKU TECHNO ARCH CO., LTD.;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HAGA, KOICHI |
分类号 |
C30B29/16;C30B25/02;H01G9/20;H01L33/28 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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