| 摘要 |
A power semiconductor device is provided to implement integration of a switching element and an integrated circuit without a damage of a radiation. A power semiconductor device includes a conducting plate(3), a switching element(1), and an integrated circuit(4). The switching element is mounted on the conducting plate, and is electrically coupled to the conducting plate. The integrated circuit is away from the switching element and is mounted on the conducting plate. The integrated circuit is electrically connected to the conducting plate. The switching element switches on/off a connection between a first main electrode and a second main electrode in response to a control signal which is inputted to a control electrode. The integrated circuit has a control circuit for controlling a power on/off of the switching element, and a voltage detection element for detecting a voltage of a rear plane of the integrated circuit. |
