| 摘要 |
<p>A method of manufacturing a non volatile memory device is provided to double the integration degree by forming a charge storing layer of an independent spacer shape at the inner side of a recess type trench. A device isolation layer(121) is formed on a substrate(120). A trench is formed by etching a part of the substrate. The trench is extended by etching the device isolation layer which is formed at both sides of the trench. A lower part insulation layer(125) is formed on the substrate which is exposed by the extended trench. A first and a second charge storing layer(126A,126B) are formed at the inner side of the trench. An upper insulation layer is formed to cover the first and second charge storing layer. A gate electrode is formed on the insulation layer so as to fill up the trench.</p> |
