| 摘要 |
<p>A method for manufacturing a flash memory device is provided to prevent residues of a conductive layer caused by a spacer, and to enhance the profile of a device when removing a control gate without performing an excessive etching process. A gate oxide layer pattern(102) and a first conductive layer pattern(104) are formed in a peripheral region of a semiconductor substrate(100), and a device isolation layer(106) is formed on the substrate. A dielectric layer(108), a second conductive layer and a metal layer pattern are formed on the entire structure including the device isolation layer. The metal layer pattern and the second conductive layer are removed to expose the dielectric layer. An oxide layer(116) is formed on the dielectric layer. An etching process is performed to remove a part of the dielectric layer and the oxide layer.</p> |
