MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided to avoid a shape defect caused by misalignment of a mask by forming a source/drain electrode layer in a self-align method. A gate electrode layer is formed on a light transmission substrate. A gate insulation layer including an inorganic material is formed on the gate electrode layer and the substrate. An organic layer including a photo-polymerizable reaction group is formed on the gate insulation layer. By using the gate electrode layer as a mask, light is irradiated from the back surface of the substrate to the organic layer to selectively polymerize the organic layer. The non-polymerized organic layer is removed to form an organic polymer layer. An organic silane layer including a hydrolytic group is formed on the gate insulation layer in a region except the organic polymer layer formation region. A composition including a conductive material is supplied to the surface of the organic polymer layer to form a source electrode layer(58a) and a drain electrode layer(58b). A semiconductor layer is formed on the gate electrode layer, the source electrode layer and the drain electrode layer.