发明名称 Circuit arrangement and methods for driving a high-side semiconductor switch
摘要 Circuit arrangement for driving a high side semiconductor switch (T1) with a first load terminal receiving a first supply potential (Vin), second load terminal providing a phase-feedback signal (S121), and a control terminal; said circuit arrangement comprising a signal conditioning circuit (12), receiving, an input signal (S121), a phase-feedback signal (S122) and providing a set signal (S131), which is set to a first logic level at a first edge of said input signal (S121) and to a second logic level at a corresponding edge of said phase-feedback signal (S122) but not before a certain delay-time (Td) has elapsed, a reset signal (S132), which is set to said first logic level at a second edge of said input signal (S121) and to said second logic level at a corresponding edge of said phase-feedback signal (S122) but not before said certain delay-time (Td) has elapsed, wherein all signals in said signal conditioning circuit (12) refer to a ground potential (GND), a floating logic circuit (13), receiving said set signal (S131) and said reset signal (S132) and providing an output signal (S141) with respect to the potential of said phase-feedback signal (S122), wherein said output signal (S141) is set to said first logic level at a first edge of said set signal (S131) and said output signal (S141) is set to said second logic level at a first edge of said reset signal (S132) and a floating driver circuit (14) connected to said control terminal of said high side switch (T1) and receiving said output signal (S141).
申请公布号 EP1919082(A1) 申请公布日期 2008.05.07
申请号 EP20060022626 申请日期 2006.10.30
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 BERNACCHIA, GIUSEPPE
分类号 H03K17/687;H02M7/5388 主分类号 H03K17/687
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