SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to decrease thermal process stresses on cell array and periphery circuit regions by forming different insulation patterns on the respective regions. A semiconductor substrate(5) includes a cell array region and a peripheral circuit region. First and second cell gate patterns(73,74) are sequentially arranged from a center of the cell array region to the outside of the cell array region. A peripheral gate pattern(76) is arranged in the peripheral circuit region. A defining pattern is arranged between the cell array region and the peripheral circuit region and encloses the cell array region. Buried insulation patterns(108) are arranged around the first cell gate pattern, between the first and second cell gate patterns, and between the second cell gate pattern and the defining pattern. Planarized insulation patterns(168) are arranged between the defining pattern and the peripheral gate pattern and around the peripheral gate pattern.