| 摘要 |
A method of manufacturing a semiconductor device is provided to control degradation of a PMOS stably by performing a counter doping process as an N-type impurity against the ions injected to control the threshold voltage, thereby preserving the current for signal transmission. A device isolation layer(306) defining an active region(304) is formed within a semiconductor substrate. An ion injection process for controlling the threshold voltage of a PMOS is performed by using a p-type impurity in the active region. A counter doping process is performed to a region corresponding to a gate forming region of interface regions between the active region and the device isolation layer by using an n-type impurity. A gate(308) is formed on the active region. A plurality of bit line contacts(316) are formed at each part of the substrate of both sides of the gate. A bit line(B) is formed and connected with the bit line contacts.
|
