| 摘要 |
An exposure mask is provided to avoid the damage to an edge part of an active region in forming a recess gate by using an exposure mask for a recess including isolated light transmission pattern. An exposure mask has an isolated light transmission pattern in a direction vertical to the major axis of an active region(400) defined in a semiconductor device wherein two light transmission patterns are included in one active region. The light width of the major axis of the light transmission pattern can be greater than that of the minor axis of the active region. The light transmission pattern can be separated from its adjacent light transmission pattern by a predetermined interval. |
